Cree is rolling out new 4-inch semiconductor materials, 1 inch larger than previously available.

The new product means that customers could double the number of devices produced per wafer compared to the 3-inch version, Cree said.

The silicon-carbide substrates and epitaxy material are used in power, lighting and communications components.

Cree announced the 4-inch version at the International Conference on Silicon Carbide and Related Materials in Pittsburgh.

Cree worked with the Defense Advanced Research Projects Agency to develop the wafers.