RF Micro, which has been researching means of delivering more power for advanced 2.5G and 3G wireless technology, reported progress on commercialization of gallium nitride (GaN) transistors on Monday.
The fabricated GaN power transistors have shown promise as an advance over silicon equivalents, RF Micro said. “These characteristics make GaN devices ideal for 2.5G and 3G base station power amplifiers,” said William Pratt, the company’s chief technical officer. RF Micro pioneered the first gallium arsenide transistors for use in cell phones.
RF Micro: www.rfmicro.com